nov-04-2003 1 bcr149... npn silicon digital transistor ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor ( r 1 = 47k ? ) bcr149f/l3 bcr149t eha07264 3 12 be c 1 r type marking pin configuration package bcr149f* BCR149L3* bcr149t* uas ua uas 1=b 1=b 1=b 2=e 2=e 2=e 3=c 3=c 3=c - - - - - - - - - tsfp-3 tslp-3-4 sc75 * preliminary maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 emitter-base voltage v ebo 5 input on voltage v i(on) 50 collector current i c 70 ma total power dissipation- bcr149f, t s 128c BCR149L3, t s 135c bcr149t, t s 109c p tot 250 250 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150
nov-04-2003 2 bcr149... thermal resistance parameter symbol value unit junction - soldering point 1) bcr149f BCR149L3 bcr149t r thjs 90 60 165 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na dc current gain 2) i c = 5 ma, v ce = 5 v h fe 120 - 630 - collector-emitter saturation voltage 2) i c = 10 ma, i b = 0.5 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.4 - 0.8 input on voltage i c = 2 ma, v ce = 0.3 v v i(on) 0.5 - 1.5 input resistor r 1 32 47 62 k ? ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 150 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1 for calculation of r thja please refer to application note thermal resistance 2 pulse test: t < 300s; d < 2%
nov-04-2003 3 bcr149... dc current gain h fe = ? ( i c ) v ce = 5 v (common emitter configuration) 10 -4 10 -3 10 -2 10 -1 a i c 1 10 2 10 3 10 h fe collector-emitter saturation voltage v cesat = ? ( i c ), h fe = 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1 v cesat -4 10 -3 10 -2 10 -1 10 a i c input on voltage v i (on) = ? ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -4 10 -3 10 -2 10 -1 10 a i c input off voltage v i(off) = ? ( i c ) v ce = 5v (common emitter configuration) 0 1 2 v 4 v i(off) -6 10 -5 10 -4 10 -3 10 -2 10 a i c
nov-04-2003 4 bcr149... total power dissipation p tot = ? ( t s ) bcr149f 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) BCR149L3 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) bcr149t 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible puls load r thjs = ? ( t p ) bcr149f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
nov-04-2003 5 bcr149... permissible pulse load p totmax / p totdc = ? ( t p ) bcr149f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) BCR149L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) BCR149L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr149t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
nov-04-2003 6 bcr149... permissible pulse load p totmax / p totdc = ? ( t p ) bcr149t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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